Mimix Broadband, Inc. has released a gallium-arsenide (GaAs), heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) image reject mixer, which can be used for upper or lower sideband operation. From 13 to 25 GHz, this mixer offers a conversion loss of 8 dB with 18 dB image rejection across the band. Labeled 18KWR0327, it is suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), and SATCOM.

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"With an input referred P1dB greater than -3 dBm, and ability to handle IFs from 0 to greater than 2 GHz, at a nominal LO level of 16 dBm in LSB or USB mode, this mixer is a useful low-cost building block for receivers and up-converters," stated Jim Harvey, CTO of Mimix Broadband.

Mimix performs 100 percent on-wafer RF testing on the 18KWR0327, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. According to Mimix, engineering samples are available from stock, and production quantities are available six to eight weeks ARO.