InGaP HBT power amplifier eyes GSM/GPRS handsets

Using indium gallium phosphide (InGaP)-based heterojunction bipolar transistors (HBTs), Anadigics has released a new family of 6 mm x 6 mm power amplifiers (PAs) for GSM/GPRS handsets.The AWT6166 and AWT6167 GSM/GPRS PAs use a pin-out, RF engine and power control scheme that are compatible with the company's current generation of 7 mm x 7 mm GSM PAs.

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Designed to reduce time-to-market for new handset designs, the key features of AWT6166 PA include 58 percent efficiency for GSM900, 53 percent efficiency for DCS, 25 percent reduction in space requirement as compared to previous-generation, low-current consumption even under poor antenna mismatch conditions, and internally regulated voltage supply. Suitable for dual-, tri-, and quad-band applications, the AWT6166 is priced $3.20 in quantities of 10,000 units

Likewise, the key features of the AWT6167 PA are 58 percent efficiency for GSM900, 53 percent efficiency for DCS, low-current consumption even under poor antenna mismatch, and internally generated reference regulated volatge supply. Tailored for for dual-band applications, the AWT6167 PA is priced at $3.10 in quantities of 10,000 units.

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