Mimix Broadband, Inc.'s new line of highly linear gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) power amplifiers cover a broad frequency band of 13 to 40 GHz with up to 39 dBm OIP3. Using 0.15-micron gate-length GaAs pseudomorphic high-electron mobility transistor (pHEMT) device model technology, the new power amplifiers achieve high performance levels as shown in the table below.

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Consequently, they are suited for wireless communications applications, such as commercial digital radios, wireless LANs and VSAT applications.

The company performs 100% on-wafer RF, DC and output power testing on these power amplifiers, as well as 100% visual inspection to MIL-STD-883 method 2010. These chips also have surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, along with small production quantities.