Mimix Broadband, Inc. has introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), four-stage power amplifier that functions as a saturated output stage. Using 0.15 micron gate length GaAs pseudomorphic high-electron mobility-transistor (pHEMT) device model technology, this amplifier covers the 17 to 26 GHz frequency range and has +24 dBm saturated output power and 20 dB small signal gain.

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This power amplifier, identified as 20MPA0289, is a competitive pin for pin replacement and is suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and radar applications.

"This circuit was optimized for saturated operation and is suitable for PA use in constant envelope radios and as a driver in high-power radio applications," stated Jim Harvey, CTO of Mimix Broadband, Inc.

Mimix performs 100 percent on-wafer RF, DC and output power testing on the 20MPA0289, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.