Mimix Broadband, Inc. has introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver that includes a three-stage LNA followed by an image-reject fundamental resistive pHEMT mixer, LO doubler and LO buffer amplifier. The image-reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this receiver covers the 35 to 45 GHz frequency range and has 4 dB noise figure and 18 dB image rejection across the band.

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The receiver, identified as 40REC0382, is suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM, and radar applications.

"The use of fundamental 'resistive mode' mixers provides exceptional linearity and broadband operation, while the incorporation of an on-chip doubler and LO buffer allows the user to provide a low level signal at 16 to 22 GHz, which eases front end design tasks," stated Dr. Jim Harvey, CTO of Mimix Broadband, Inc. "The input referred IP3 is greater than 3 dBm, which makes this circuit suitable for high order QAM systems without the need for variable attenuators in the LNA stages."

Mimix performs 100 percent on-wafer RF, DC and noise figure testing on the 40REC0382, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, and production quantities are available six to eight weeks ARO.