Advanced RF CMOS ICs supplier Peregrine Semiconductor Corp. has opened its third engineering design site, the New England design center (NEDC). This adds technical resources to fuel the company’s high-growth momentum. Based in Nashua, NH, a concentrated locality of RF, analog and mixed-signal expertise, the initial group comprises experienced RF/microwave design and product development engineers with an average of 17 years experience. About six engineers are now at NEDC, and this number is expected to grow to a dozen by year's end.

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“The launch of the NEDC team allows us to further serve an industry seeking more highly integrated RF solutions for multimode operation of next-generation protocols such as GSM/EDGE, CDMA, WCDMA/UMTS and WLAN,” stated Dan Nobbe, vice-president of engineering at Peregrine. “UltraCMOS technology creates a virtual blank slate for out-of-the-box engineering, and now RFICs can extend into new markets that will benefit from a higher level of integration and functionality achievable today only with Peregrine’s silicon-on-sapphire process,” he added.

According to Peregrine, UltraCMOS technology delivers performance advantages over competing mixed signal processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.

“We expect continuous expansion in New England, and look to this center as a catalyst for growth,” said Jim Cable, CEO. and president of Peregrine.