Besides optimizing Si-avalanche photodiodes (Si-APDs) for use with pulsed laser diodes for NIR range (approximately 900 nm), Laser Components IG Inc.’s’ APDs also offer high performance in the red spectral range. The SAE500VS is generally suitable for detection of the smallest amounts of light from 400 nm to 1050 nm. With a sensitivity of 38 A/W, its optimum wavelength is 650 nm. This diode has been optimized to be used in range finding systems in combination with low-cost laser diodes at 650 nm. Other applications are data transmission or fluorescence measurement.

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The SAE500VS has an epitaxy structure and is produced on 4-inch wafers. The APD chip has an active surface with a diameter of 500 µm and is packed in a TO-18 housing. Customized housings and active surfaces are available on request.