HJ FET raises the bar for low-noise performance
California Eastern Laboratories (CEL) has announced the availability of a new, ultra-low noise heterojunction FET from NEC. Ideal for X and Ku-band applications like DBS LNBs, the new NE3511S02 delivers a noise figure (NF) of just 0.3 dB with 13.5 dB gain (typical at 12 GHz, 2 V, 10 mA). The NE3511S02 is housed in NECs newest Pb-Free HJ-FET package, the S02. This hollow plastic surface-mount package has an overall footprint of just 3.2 mm x 3.2 mm and features recessed leads for lower inductance and improved performance.
A lower-cost version, the NE3512S02, is also available. It is housed in the same S02 package and delivers a NF of 3.5 dB with 13.5 dB gain (typical at 12 GHz, 2V, 10mA). Both parts are in high-volume production and available now from CEL.
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