Two new gallium arsenide (GaAs) transistors released by M/A-COM, a business unit of Tyco Electronics, are designed for WiMAX base stations and customer premise equipment (CPE) applications up to 3.8 GHz. MAAP-003438-005PP0 and MAAP-003438-010PP0 are 12 V GaAs pseudomorphic high electron mobility transistors (pHEMT) that provide RF power levels of 5 and 10 Watts, respectively.

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Besides WiMAX base station and CPE applications, MAAP-003438-005PP0, a 12 volt GaAs pHEMT, is also suitable for multi-channel multipoint distribution system (MMDS), wireless local loop (WLL) or wideband code division multiple access (WCDMA) driver applications from 2.1 GHz. It offers 5 W (P1db) and ACPR of –40 dBc at +27 dBm Pout (WCDMA). Its typical gain is 10 dB in lead free 3 mm PQFN 16-lead surface mount packaging.

Likewise, MAAP-003438-010PP0 is also a 12 V GaAs pHEMT for WiMAX base station and CPE applications up to 3.8 GHz, as well as for MMDS, WLL or WCDMA driver applications from 2.1 GHz. In contrast to the MAAP-003438-005PP0, this amplifier provides 10 W (P1db) and –40 dBc at +30 dBm Pout (WCDMA). It has a typical gain of 9.5 dB in a lead free 4 mm PQFN 16-lead surface mount package.

Datasheets and supporting technical documents are available online at www.macom.com.