Operating at 5.8 GHz, the NESG4030M14 HBT from NEC delivers 11 dB of gain at a bias of only 2 V and 6 mA. This makes the device well suited for battery-powered products such as 802.11a mobile Wi-Fi applications.

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Fabricated using the company’s latest 140-GHz fMAX UHS4 SiGe:C process, the device also offers 80-V (MM) of onboard ESD protection. This protection is important to the safe and reliable operation of mobile Wi-Fi products, and it isn’t often found in front-end LNA devices like the NESG4030M14, according to NEC. Typical specifications at 2 V, 6 mA, and 5.8 GHz include noise of only 1.1 dB and a P1dB linearity of +9 dBm.

The NESG4030M14 comes in NEC’s miniature, RoHS-compliant (Restrictions on Hazardous Substances) M14 package. It is in stock and available now from California Eastern Laboratories in bulk and tape-and-reel. It costs $0.40 each in quantities of 10,000.

• California Eastern Laboratories

Operating at 5.8 GHz, the NESG4030M14 heterojunction bipolar transistor (HBT) from NEC delivers 11 dB of gain at a bias of only 2 V and 6 mA. This makes the device well suited for battery-powered products such as 802.11a mobile Wi-Fi applications.

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