Mimix Broadband, Inc. has released gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) sub-harmonically pumped receiver and transmitter devices, which integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier and a low noise amplifier for the receiver, and an output amplifier for the transmitter.

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The image reject mixer eliminates the need for an image bandpass filter after the amplifier to remove thermal noise at the image frequency. Using 0.15-micron gate-length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these devices cover the 18 to 25 GHz frequency bands. The receiver has a noise figure of 2.5 dB and 15 dB image rejection across the band. The transmitter has a +20 dBm output third-order intercept point (OIP3) and 15 dB image rejection across the band.

This receiver and transmitter pair, identified as XR1006 and XU1002, respectively, are suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

Mimix performs 100% on-wafer RF and DC on these products, as well as 100% visual inspection to MIL-STD-883 method 2010. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples and small production quantities are available from stock production.