Interconnect Technology Avoids High-Temperature Compression

Oct 24, 2008 3:47 PM, MD&D News Staff

The patented Direct Bond Interconnect (DBI) technology from Ziptronix enables reliable, repeatable, low-cost wafer-to-wafer or chip-to-wafer bonding without the need for high-temperature compression techniques that can lower yields and increase costs. A key feature in the technology is the ability to use nickel (Ni) as a DBI metal to reliably interconnect to copper, tungsten, or aluminum through-silicon vias (TSVs), while providing adequate planarity of the oxide/metal interface to ensure a strong bond.

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The process supports both backside and frontside interconnects. It also resolves the fundamental problem of non-planar surface depression (dishing) that typically occurs with copper. By chemically modifying the surface oxide with its patented ZiBond technology, Ziptronix creates a strong, reliable oxide bond at a much lower temperature.

Another key element in reducing cost is the elimination of the need for compression of the bonded wafers during the interconnect phase. The wafers can be batch-processed at less than 300°C without compression to complete both the electrical connection at the Ni-to-Ni interface, as well as a reliable metallic bond. Because the process works with standard pick-and-place tools, capital costs to implement the process are minimal.

The Ziptronix 3D IC technology is available for license to OEMs/IDMs, such as manufacturers of high-performance imaging systems and sensor arrays, mobile electronics, consumer electronics, and portable gaming systems, as well as to foundries seeking to implement TSV technology and to outsourced semiconductor assembly and test (OSAT) vendors.