Analog/mixed-signal IC supplier Microsemi Corp. has added the DRF100 and DRF1200 to its family of high-voltage, flangeless-packaged, RF MOSFET power products. DRF100 is an RF driver IC with an 8 A output capable of driving high-power, 500 V to 1200 V RF MOSFETs at frequencies up to 30 MHz. It also features a dynamic “anti-ring” function that prevents cross conduction of the MOSFETs in bridge or push-pull topologies. The DRF1200 is an integrated solution comprised of the DRF100 RF driver IC and a high-power 1000V RF MOSFET output. The close proximity of the driver and MOSFET in a single package greatly reduces circuit inductance compared to discrete alternatives. Typical applications include RF generators for plasma generation, CO2 laser excitation, MRI equipment, broadband linear amplifiers and HF/VHF communications equipment.

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The DRF100 is available in the new flangeless T3 package, while the DRF1200 is available in the new T2 flangeless package. These packages lower thermal resistance and costs compared to traditional copper tungsten flanged devices. To obtain the high power dissipation, the backside of the new packages is lapped to provide an optimum thermal interface surface to mate with the system heat sink. The coplanar lead arrangement facilitates circuit layout and provides more than 2500 V isolation between any terminal and the mounting surface.

Both devices are designed for Class C, D and E RF generator applications operating from 1 MHz to 30 MHz; as well as for pulsed power and modulator applications. Maximum CW output power is 600 W. They are specified for 250 V operation with 1000 V BV_DSS.

In 100-piece quantities, the DRF100 is priced at $92.83 and the DRF1200 at $206.44. Both devices and their evaluation boards are available from stock.