30-V N-Channel and 20-V P-Channel MOSFETs Feature Low Profile

For handheld devices requiring an n-channel MOSFET that is thinner than the standard 0.8 mm, the SiA444DJT’s 0.6-mm profile is 13% less than the next thinnest 2-mm by 2-mm device and 19% less than the standard 0.8-mm height.

For handheld devices requiring an n-channel MOSFET that is thinner than the standard 0.8 mm, the SiA444DJT’s 0.6-mm profile is 13% less than the next thinnest 2-mm by 2-mm device and 19% less than the standard 0.8-mm height.

Vishay Intertechnology has released 30-V n-channel and 20-V p-channel TrenchFET power MOSFETs in the thermally enhanced Thin PowerPAK SC-70 package with an ultra-low 0.6-mm profile. The SiA444DJT features an n-channel MOSFET in the 2-mm by 2-mm footprint area, and the SiA429DJT features low on-resistance for a p-channel device with a sub-0.8-mm profile.

For handheld devices requiring an n-channel MOSFET that is thinner than the standard 0.8 mm, the SiA444DJT’s 0.6-mm profile is 13% less than the next thinnest 2-mm by 2-mm device and 19% less than the standard 0.8-mm height. Additionally, it offers low on-resistance of 17 mΩ at 10 V and 22 mΩ at 4.5 V, and the lowest maximum on-resistance multiplied by gate charge product of 170 mΩ-nC at 10 V and 110 mΩ-nC at 4.5 V.

If a thinner p-channel is needed, the SiA429DJT provides on-resistance of 20.5 mΩ at 4.5 V, 27 mΩ at 2.5 V, 36 mΩ at 1.8 V, and 60 mΩ at 1.5 V. For handheld electronics, the lower on-resistance of the SiA429DJT and SiA444DJT translates into lower conduction losses, thus prolonging battery life between charges.
The Thin PowerPAK SC-70 package of the devices is optimized for small handheld electronics, including cell phones, smart phones, MP3 players, digital cameras, eBooks, and tablet PCs. In these MOSFETs, the SiA444DJT will be used for high-frequency dc-dc converters, while the SiA429DJT is ideal as a load switch or charger switch, and can also be used as a high-side switch in dc-dc buck converter applications.

The MOSFETs are halogen free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC. Samples and production quantities of the new SiA444DJT and SiA429DJT TrenchFET power MOSFETs are available now, with lead times of 12 to 14 weeks for larger orders.

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