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The dual P-channel FDMA6023PZT MOSFET from Fairchild Semiconductor offers the lowest on resistance (RDS(ON)) in the industry, according to the company. Combined with its low power requirements, its 20-V, 2- by 2- by 0.55-mm thin lead-frame exposed MicroFET package suits the device for portable applications. Fairchild also says that the FDMA6023PZT provides excellent thermal resistance, delivers superb power dissipation, and reduces conduction losses compared to conventional MOSFETs. It uses Fairchild’s advanced-performance PowerTrench MOSFET process technology, which yields exceptionally low values for RDS(ON), total gate charge (QG), and Miller Charge (QGD) for superior conduction and switching performance.

The FDMA6023PZT is part of a portfolio of MicroFET MOSFETs that are designed for power design challenges in feature-rich portable applications. For example, the FDMA1027PT is a 20-V P-channel PowerTrench MOSFET. The FDFMA2P853T is a 20-V P-channel PowerTrench MOSFET with a Schottky diode. These products are 55% smaller and 50% lower in height than the 3- by 3- by 1.1-mm MOSFETs typically used in low-voltage designs, the company says. With samples available now, the FDMA6023PZT costs $0.48 each in 1000-piece units. Delivery is eight to 10 weeks ARO.