RF Micro Devices (RFMD) is expanding its 3G product portfolio to include a complete power platform for entry-level 3G handsets. The RF323x power platform, comprising the RF323x and RF72xx product families, provides handset manufacturers a reference design for the implementation of multi-region, multi-node 3G handset platforms.

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The RF323x aims to address the challenges confronting handset manufacturers as they seek to meet the increasing global demand for affordable smart phones.  RFMD hopes that by using the RF323x power platform, designers of entry-level 3G smart phones can achieve the optimum balance of cost, performance and flexibility in the RF front end while satisfying critical requirements for quality and reliability in high-volume handset manufacturing.  

The RF323x features the PowerStar-based RF323x 2G transmit module with pin-compatible options supporting either one or two bands of wideband code division multiple access (WCDMA).

The pin-compatible WCDMA power amplifiers (PA) are available in two product family options. The first option, the RF724x family, addresses all major frequency bands and delivers peak efficiency and DG.09 as low as 13 mA through the use of multi-bias control. The second option, the RF722x family, also addresses all major frequency bands and is optimized for chipsets using three-mode control schemes.  The RF323x is compatible with major chipset providers including Qualcomm, Mediatek, Broadcom, and ST Ericsson.

The RF323x power platform, comprised of the RF323x and RF72xx product families, provides handset manufacturers a reference design for the implementation of multi-region multi-node 3G handset platforms.
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Samples are available now, and volume production is anticipated in the March 2011 quarter.

RF Micro Devices

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