Mimix Broadband, Inc. has unveiled a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) thre-stage buffer amplifier with ultra wide bandwidth and high dynamic range. Using 0.15-micron gate-length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 18 to 38 GHz frequency bands and can operate at 3.5 V or 5.5 V. This device can also be operated with all three stages biased in parallel or with independent bias for input and output stages, as required to optimize performance. Plus, it offers a small signal gain of 20 dB with a noise figure of 3.5 dB across the band. It also has 10 dBm OP1dB at low noise bias or can provide 14 dBm OP1dB at power bias.

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Designated as 28LN3UA0102, it provides an excellent LO driver or buffer amplifier, and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM, and radar applications.

"The design of this device allows it to be used in many different functional modes in a radio, simplifying design and manufacturing issues, including inventory," stated Jim Harvey, CTO of Mimix Broadband. "At low noise bias it is suitable as an LNA, and in power bias it can support LO buffer and transmit buffer roles."

Mimix performs 100 percent on-wafer RF, DC and noise figure testing on the 28LN3UA0102, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available from stock, and production quantities are available six to eight weeks ARO.