30-nm High-Density NAND Flash Fits Mobile Devices

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Samsung Electronics has announced two high-density memory solutions for mobile devices. The company says that the new storage solutions, a 64-Gbyte moviNAND memory device and a 32-Gbyte micro secure digital (microSD) memory card, satisfy mobile handset designers’ requirements for advanced company high-density memory. Both are based on Samsung’s advanced 32-Gbit NAND flash.

Measuring 1.4 mm high, the 64-Gbyte moviNAND comprises 16 30-nm class 32-Gbit multilevel-cell (MLC) NAND chips and a controller.

Measuring 1.4 mm high, the 64-Gbyte moviNAND comprises 16 30-nm class 32-Gbit multilevel-cell (MLC) NAND chips and a controller.

Measuring 1.4 mm high, the 64-Gbyte moviNAND comprises 16 30-nm class 32-Gbit multilevel-cell (MLC) NAND chips and a controller (Fig. 1). Samsung achieved the 17-die stack by using chips that are 30 µm thick and advanced package technology. With this solution, Samsung’s proprietary moviNAND memory is now available in 64-, 32-, 16-, 8-, and 4-Gbyte densities.

The 32-Gbyte microSD card is 1 mm thick, and the portion of the card that’s inserted into the handset is just 0.7 mm high.

The 32-Gbyte microSD card is 1 mm thick, and the portion of the card that’s inserted into the handset is just 0.7 mm high.

The 32-Gbyte microSD card stacks eight 32-Gbit NAND components and a card controller (Fig. 2). It’s enabled by the use of Samsung’s advanced 30-nm class 32-Gbit NAND flash memory. According to Samsung, it’s the industry’s highest-capacity, production-ready microSD card. It is 1 mm thick, and the portion of the card that’s inserted into the handset is just 0.7 mm high.

The 64-moviNAND has been in mass production since December 2009. The 32-Gbyte microSD is now sampling with mass production expected next month.

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© 2012 Penton Media Inc.


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