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Mitsubishi Electric Corporation has finished development of a high output indium gallium phosphide heterojunction bipolar transistor (InGaP HBT) and will begin sample shipment on Dec.15, 2006. The amplifiers are for WiMAX terminals used in mobile and domestic markets, and are the smallest of its kind in the industry at the time of this release.

The MGFS36E2527 is a high-output amplifier designed for the 2.5 GHz-2.7 GHz range. Power output is 27 dBm. An external matching circuit is not needed because the output port impedance of the device is already the standard 50 Ohms. This new amplifier will be available Dec.15, 2006 at a price of 1,000 yen.