Expanding its RF offerings for enhanced data rates for GSM evolution (EDGE) handset design, Freescale Semiconductor unveiled its first RF CMOS 90 nanometer (nm) transceiver. The new RFX275-30 is a transceiver subsystem that offers low transmit and receive current, high receiver sensitivity and compact size. It accelerates phone manufacturers’ integration time via simplified programming. Additionally, the new subsystem delivers lower total cost of ownership by significantly shortening test time in manufacturing and bill of materials through integration. Implemented in 90 nm CMOS technology, it yields the dramatic 50% reduction in board space.

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Other key benefits include:

• Simplified programming, delivering a 60% reduction in time to first call
• Shortened test time by up to 90%
• Significant increase in phone yields with up to a 30% improvement over previous solutions

The RFX275-30 EDGE RF subsystem comprises the MMM7010 transceiver, which integrates the analog baseband and contains the DigRF interface, and the MMM6028 power amplifier, which includes the antenna switch and most passive components. The highly integrated subsystem delivers:

• Low power consumption for increased standby and talk times
• -110 dBm sensitivity for improved call performance
• Reliable quality for clear reception, low noise and fewer dropped calls
• Highly integrated components for ease of assembly
• Auto-calibration features for improved handset yields in manufacturing
• Software-friendly programming model enabling fast time to first call

The innovative layer-one programming function, which debuted in the RFX275-20 RF subsystem earlier this year and is currently used in a variety of handsets worldwide, is included in the new RFX275-30, according to Freescale. Also, the RF EDGE solution is compliant with the DigRF industry standard.

Freescale said that the RFX275-30 EDGE RF subsystem is sampling now and is slated for production in the third quarter.