GaAs MMIC doubler with integrated gain, doubler and driver stages

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Mimix Broadband Inc. has introduced an active doubler in an RoHS-compliant 3 mm x 3 mm plastic QFN package that delivers +20 dBm output saturated power (Pout) with a 35 dBc fundamental suppression. The high output power of the XX1007-QT makes it well suited as a driver stage for the final output power amplifier in VSAT transmit systems.

Using 0.15 micron gate-length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the doubler covers the 13.5-17.0 and 27.0-34.0 GHz frequency bands and combines a gain stage, passive doubler and driver amplifier in a single device. Identified as the XX1007-QT, this device is well suited for VSAT, millimeter-wave point-to-point radio — as well as LMDS and SATCOM applications. The device includes on-chip ESD protection and an integrated bypassing capacitor, eliminating the need for any external components.
The XX1007-QT has a self-bias configuration, requiring only a positive 5 V supply.

Mimix performs 100% RF testing on the XX1007-QT. Production quantities are available from stock.

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© 2012 Penton Media Inc.


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