Tapping miniature RF transistor packaging technology, NEC has developed a new, flat lead package specifically for use with its high breakdown voltage silicon germanium (SiGe) transistors. The M16 measures just 1.2 mm x 1.0 mm x 0.5 mm (including leads) and is more than 70 percent smaller in volume than the SOT-343 packages that usually house these chips.

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Available now in the M16 package are the NESG2021, NESG2031 and NESG2101. These high frequency SiGe NPN transistors are suitable for use as LNAs, gain blocks, and oscillators in a wide variety of applications from 800 MHz to 6 GHz where small size and low profile are critical. Delivering low noise and high associated gain, they combine the performance advantages of GaAs with the cost advantage of Silicon.

All three devices are available now from California Eastern Laboratories.