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Fairchild Semiconductor has introduced a series of high-efficiency, N-channel MOSFETs that raise voltage protection to 8 kV ESD (HBM) –– 90% higher than existing devices on the market. The company's FDS881XNZ series support the latest architectures for battery-pack protection applications because of their ability to withstand avalanche and high peak-current events and to withstand voltage spikes and avoid unexpected voltages at the output side.

Using Fairchild's power trench process, these low-RDS(ON) MOSFETs, including the FDS8812NZ with an RDS(ON) of less than 5 milliOhms, reduce conduction losses and extend battery life. They also provide rugged and robust avalanche and high peak-current capability to ensure system safety by surviving unexpected voltage spikes that can occur in battery packs.

The series includes the FDS8812NZ with an RDS(ON) of 4 milliOhms, the FDS8813NZ with an RDS(ON) of 4.5 milliOhms and the FDS8817NZ with an RDS(ON) of 7 milliOhms.

The FDS881XNZ series of N-channel MOSFETs are available in an industry-standard SO8 package.

The FDS881x series employ lead-free terminals and has been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. These products are designed to meet the requirements of the European Union directive on the restriction of the use of certain substances (RoHS).

Prices range from $0.75 to $1.18 in 1000 piece lots; samples are available. Delivery of production quantities is 12 weeks ARO.