Article Tools

• 

Kopin Corp. has developed GaN (Gallium Nitride) high electron mobility transistors (HEMTs) for use in the next generation of military, public mobile radio, WiMAX and WCDMA base station products. The total addressable market for these GaN infrastructure products is estimated to be as high as $1 billion annually, providing strong future revenue growth potential to both Kopin and its customers.

Kopin has been enhancing the performance, reliability and manufacturability of GaN transistor structures by capitalizing on its know-how in epitaxial growth of state-of-the-art GaN materials and its extensive experience with volume manufacturing of III-V materials. Kopin’s GaN-based HEMT wafers exhibit excellent device characteristics with a high degree of thickness and compositional uniformity. Kopin’s GaN transistor efforts have focused on using silicon carbide substrates, although efforts have also been extended to other starting materials, including sapphire.