Article Tools

• 

As battery voltages drop in portable devices, designers need power-amplifier ICs that can run on low supply voltages, yet still deliver the output power their applications demand. Said to be the industry's first, NEC's new UPG2250T5N GaAs power amplifier is designed to operate at supply voltages of 1.5 V to 3.5 V, and at 1.8 V delivering +20 dBm of output power. At 3.0 V the output power rises to +25 dBm.

With 25 dB gain at 1.8 V and 30 dB at 3.0 V, the device is able to deliver full power without the need for additional driver devices. In addition, it has a gain control range of approximately 60 dB that enables lowering the RF output power, thereby lowering power consumption and prolonging battery life. Battery life is further enhanced by the PA's 55% efficiency.

To fully use the new, lower-voltage lithium-ion batteries, NEC developed a new enhancement-mode (E-Mode) FET process. Unlike heterojunction bipolar transistors, E-Mode devices provide zero offset voltage and low on-resistance, resulting in excellent power performance under low-voltage operation. NEC's E-Mode process features a buried regrown p+ GaAs gate structure that besides exhibiting low on resistance, exhibits negligible drain-current frequency dispersion and achieves enhanced efficiency at high power levels.

At just 1.5 mm square and 0.37 mm in height, the T5N is approximately half the size of other PA ICs on the market. The UPG2250T5N can be combined with NEC’s GaAs RFIC switches and external LNA devices to provide complete front-end solutions.

For further information on this product contact California Eastern Laboratories.