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RFMD has announced that it has started pre-production sampling of five gallium arsenide (GaAS) pHEMT low-noise amplifiers (LNAs) for GSM, CDMA, UMTS, EDGE and WiMAX air interface standards. These LNA products are currently sampling to key cellular infrastructure and WiMAX base station OEM customers and are targeted for production release in September.

The five GaAs pHEMT LNAs offered are part of the RF386x product family--RF3861, RF3863, RF3865, RF3866 and RF3867. Offering customers a broadband frequency range of 380 MHz to 3800 MHz with low-noise figure (0.7dB) and a variety of LNA configurations (single-stage, dual-stage and dual-channel), these amplifiers provide flexible supply voltages (2.5 V to 6.0 V), high gain (up to 30 dB), very high output IP3 (up to +38 dBm) and excellent input and output return loss. In addition, RFMD's LNA products are packaged in a low-cost, extremely small (5 mm x 5 mm) plastic QFN package.