C-band 5.6 to 6.8 GHz MMIC VCO with buffer amplifier

Hittite Microwave introduces an HBT MMIC VCO with an integral output buffer amplifier packaged in a surface-mount, 8-leaded MSOP package. It features an exposed base for improved RF and thermal performance. The HMC358MS8G features a P_out of >10 dBm from a 3 VDC supply, SSB phase noise of -105 dBc/Hz @ 100 kHz, and no external resonator is needed. The VCO features phase noise over temperature, shock, and process due to its monolithic structure. The device is designed for UNII, HiperLAN, point-to-point radios and WLAN applications.
Hittite Microwave
www.hittite.com

Broadband RF gain block amplifiers

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Analog Devices debuts the AD8353 and AD8354 broadband, fixed-gain linear amplifiers that operate at frequencies from 100 MHz to 2.7 GHz. Both offer fixed gain of 20 dB with single-ended input and output, internally matched to 50 Ω. Both products are specified for operation with a bias voltage of 3 to 5 VDC. The AD8353 provides the user with a linear output power of +8 dBm and a third-order intercept point of +23 dBm, while drawing only 42 mA supply current. The AD8354 provides a linear output of +4 dBm and a third-order intercept of +19 dBm, while drawing only 24 mA supply current. The devices are packaged in the 3 × 2 mm chip-scale package, which uses an exposed paddle and provides suitable thermal characteristics. Features include 900 MHz, 1.9 GHz, and 2.7 GHz operation over the specified operating temperature range of -40 to +85°, at both 3 and 5 VDC bias voltage. The product is designed for wireless applications such as VCO buffers, transmit and receive amplification, power amplifier pre-amps and low-power antenna drivers.
Analog Devices
www.analog.com

Specifications at a glance:

• 100 MHz to 2.7 GHz operation
• 20 dB fixed gain
• 3 to 5 VDC operation
• -40 to +85° temperature range

3GPP UMTS linear amplifier

Stealth Microwave introduces the SM2122-52LD, a compact 3GPP LDMOS amplifier operating from 2110 MHz to 2170 MHz. With typical average output power of 38 dBm for single-carrier, and 36 dBm for multi-carrier (4 carriers), the unit is spec-compliant with 3GPP ETSI TS 125 104 V4.2.0 (2001-9). The unit offers a linear gain of 47 ±0.5 dB and I/O VSWRs of 1.3:1. Features include a built-in output isolator, temperature compensation, and logic on/off control, forward/reflected power detection. Temperature sensing and current alarms are also available.
Stealth Microwave
www.ssbtech.com
sales@ssbtech.com

Specifications at a glance:

• 2.11 to 2.170 GHz operation
• Average output of 38/36 dBm
• 47 ± 0.5 dB linear gain
• 1.3:1 VSWR