InnoSys Inc., a Salt Lake City, Utah-based manufacturer of RF/microwave and millimeter wave devices for wireless, broadband and communication markets, has developed a microfabrication process to realize RF/microwave vacuum electronics. Applying the newly developed microfabrication technique, labeled SSVD, InnoSys has readied a traveling wave tube (TWT) amplifier prototype for Ka-band applications. According to the developer, it combines vacuum electronics using semiconductor and micro-electromechanical systems (MEMS) microfabrication techniques with other high-volume manufacturing methods.

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The TWT amplifier was designed to achieve, at 30.5 GHz, a power output of 20 W (see the figure). But, in reality, it demonstrated more than 30 W, claims the maker. Plus, internal tests show that the prototype power amplifier provides 11 db to 12 dB of linear gain. Together, with its solid-state driver, the Ka-band millimeter wave power amplifier can provide higher than 50 dB linear gain. The total device size measures less than 4"×2"×1.75" and weighs less than 800 grams. The device mounts easily with its solid-state driver and associated bias protection circuit on a 6"×8" base plate. Application-specific computer-aided design capability and tools were developed and used in the development of this SSVD TWT amplifier, says the developer.

InnoSys' Dean Anderson, director of business development, believes that the result of this work enables a new era in microwave electronics, one in which automated fabrication and assembly techniques developed for solid-state devices are employed to build vacuum electronics capable of meeting future needs in millimeter and sub-millimeter transmitter systems. Because the dimensional accuracy of the microfabrication processes is on the order of one µm or less, devices based on this technology should reach multi-THz operating frequencies. Other RF interaction structures are also under development at InnoSys for applications ranging from Ku-band to W-band.

For details, go to www.innosystech.com