Expanded FET semiconductor line

Fujitsu announces the expansion of its Radio Link product offering with the introduction of the internally matched FLM5972-4F and FLM5972-12F FETs. The devices complement the existing FLM5972-XX series products and feature low intermodulation distortion (IM₃ = -45 dBc typ.) These products are designed for broadband applications in the 5.9 to 7.2 GHz frequency range. Typical performance includes P1dB power gain of 9.5 dB and the 1 dB compression. Output powers are 36.5 dBm and 41.5 dBm, respectively. Power-added efficiency is at 36%. Products are available for sampling, prototype, and production requirements.
Fujitsu Compound Semiconductor
www.fcsi.fujitsu.com

High-gain PA RFICs

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Sirenza Microdevices has expanded its SPA Series of linear power amplifier RFICs with the addition of two new high-gain models. The SPA-2118 and SPA-2318 offer cellular, PCS and 3G equipment designers 32 dB of gain at 900 MHz and 23 dB of gain at 1.9 and 2.1 GHz, along with exceptional linearity previously unavailable in a single integrated circuit. These GaAs HBT devices cover the 850 MHz, 1950 MHz and 2150 MHz frequency bands and function as driver amplifiers for wireless infrastructure equipment. The devices are housed in standard surface-mount SOIC-8 plastic packages with backside metallization. The devices are powered by a single +5 VDC supply voltage with an on-chip active bias circuit providing consistent performance over temperature. They offer typical third-order intercept points of +47 to +48 dBm, IS-95 channel power of +23 to +24 dBm and W-CDMA (10.5 dB peak-to-average modulation, 64 DPCH + overhead channels) channel power of +21.5 dBm at -45 dBc ACP.
Sirenza Microdevices
www.sirenza.com