Electronics distributor Richardson Electronics, Ltd.has signed a global distribution agreement with HVVi Semiconductors, Inc., of Phoenix, AZ, to distribute its RF power transistors, based on HVVi’s innovative, new HVVFET architecture. HVVi recently announced a major advance in silicon RF power transistor design in more than 15 years.

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“We pride ourselves on working with the industry’s leading-edge suppliers to bring pioneering technology to the market. With HVVi's innovative geometries, they fill a void in the Avionics transponder and ground-based Radar markets. Gain, efficiency, and load-pull survivability are just a few of their attributes,” said Chris Marshall, vice president of Richardson Electronics’ Wireless and Broadband Communications Group. “HVVi’s agile design assistance is expedient and thorough. We welcome this opportunity to help our customers find alternative design solutions.”

HVVi recently introduced its first three products based on the HVVFET architecture: the HVV1011-300, HVV1214-075 and HVV1214-025. Targeted at high power, pulsed RF applications in the L-band such as IFF, TCAS, Mode-S, TACAN and ground based radar; the three new devices leverage the inherent benefits of the HVVFET process to deliver high output power and high gain in an extremely compact package. All three transistors are designed to operate at 48 V.

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