13 GHz to 40 GHz linear power amplifiers

Mimix Broadband Inc. has introduced a line of GaAs MMIC power amplifiers covering the 13 GHz to 40 GHz frequency bands. The amplifiers are intended for wireless communications applications, such as commercial digital radios, wireless LANs and VSAT applications.

Engineering samples are available, along with small production quantities.
Mimix Broadband
(281) 988-4600


Power amplifiers

SST Communications has introduced two power amplifiers for 802.11a and 802.11b/g WLAN systems. The power amplifiers include the SST12LP14A for 2.4 GHz 802.11b/g and the SST11LP11 for 5 GHz 802.11a.

When configured for high-efficiency operation, the SST12LP14A requires an Icq of 45 mA. It provides 29 dB gain and linear output power of 17 dBm at Icc of 85 mA. Under high-power configuration, the same device provides Pout of 22 dBm at 210 mA for 802.11g and Pout of 23 dBm at 240 mA for 802.11b application, respectively. The SST12LP14A has linearity of approximately 4%-added EVM at 22 dBm output power, which is essential for 54 Mbps 802.11g operation while meeting the standard's spectrum mask at +24 dBm. Designed to operate over the entire 802.11a band between 4.9 GHz and 5.8 GHz, the SST11LP11 requires Icq of 80 mA. It consumes 180 mA when delivering 24 dB gain and 18 dBm output power across the 4.9 GHz to 5.8 GHz band with 4%-added EVM.

The SST12LP14A and the SST11LP11 are available in production quantities. The SST12LP14A is pin-compatible to the SST12LP14 and is offered in a 3 mm × 3 mm, 16-pin LCC package. The SST11LP11 is offered in a 3 mm × 3 mm, 16-pin VQFN package. Both devices are also offered in non-Pb packages.
SST Communications
(408) 735-9110


25 MHz to 2500 MHz MMIC power amplifier

AMCOM Communications has introduced a GaAs MESFET MMIC power amplifier, the model AM012535MM-BM. At 20 V drain bias voltage, the PA achieves an instantaneous bandwidth from 25 MHz to 2500 MHz, with gain of 22 dB +/1 dB, output power of 35 dBm +/-1 dBm, and efficiency over 25% across the band.

This MMIC PA uses a patented high-voltage FET (HiFET) technology, which connects the active devices both dc and RF in series, so that both dc bias voltage and RF impedance are multiples of the number of devices in series. Since the power device RF impedance is usually much lower than 50 Ω, the HiFET device has an RF impedance close to 50 Ω, which leads to broadband amplification.

Engineering samples are available from stock, and production quantities are available in eight to 10 weeks ARO.
AMCOM Communications
(301) 353-8400


3.5 GHz WiMAX, BWA transmit amplifiers

TriQuint Semiconductor Inc. has introduced two amplifiers for broadband wireless access (BWA), 802.16 (WiMAX) and general S-band high-power amplifier applications. The two amplifiers provide instantaneous bandwidth of 200 MHz across any segment of the 3.3 GHz to 3.9 GHz band.

The TGA2923-SG is a 10 W power amplifier intended for 3.5 GHz BWA and WiMAX applications. The TGA2923 can be matched for ~200 MHz instantaneous bandwidth in the 3.3 GHz to 3.9 GHz frequency band with two additional external components. In a typical 3.4 GHz to 3.6 GHz BWA application, the TGA2923 delivers 9 dB power gain, 10 W Pout, and an IMD3 level of -50 dBc at 28 dBm SCL.

The TGA2925-SG is a 5.6 W power amplifier intended for the 3.5 GHz BTS or SS wireless equipment market. Like the TGA2923, two external components are required for ~200 MHz instataneous bandwidth in the 3.3 GHz to 3.9 GHz range. Typical performance at 3.5 GHz will produce 11 dB nominal gain, 37.5 dBm Pout, and an IMD3 level of -50 dBc at 24 dBm SCL.

Both devices are fabricated using TriQuint's proven 0.5-micron gate-length, HFET proces. Both parts are offered in a molded 2-lead, SMT-style package that is lead-free and RoHS-compliant.
TriQuint Semiconductor Inc.
(503) 615-9000


10 W power amplifier module

WJ Communications Inc. has launched a 10 W power amplifier module operating at 10 V. The ECM178 is targeted for use as a power stage amplifier in PAS/PHS base stations and repeaters.

The 10V ECM178 achieves a power output of +35.5 dBm in PAS operation with an ACPR (at 600 kHz offset) of less than -69 dBc and an ACPR (at 900 kHz offset) of less than -72 dBc. The ECM178 is also an internally matched multistage amplifier module that achieves 33 dB gain while operating at 1.9 GHz.
WJ Communications Inc.
(408) 577-6342


Bluetooth power amplifier

SST Communications has announced a Bluetooth power amplifier solution. Targeting Bluetooth Class 1 applications like wireless USB dongle and long-range pico-nets, the SST12LP00 increases transmission range by 40% with less than 100 mA in current consumption.

The SST12LP00 is an InGaP/GaAs power amplifier with high linear output power. The device features a minimum 29 dB gain across 2.4 GHz to 2.5 GHz and linear output power up to 21 dBm at 3.3 V operation.

The SST12LP00 comes in a 6-pin VQFN package. The part is priced at $0.35 in 10K unit quantities.
SST Communications
(408) 735-9110


Fixed-gain differential amplifiers

Linear Technology Corp.'s LT1993 is a family of differential amplifiers for driving analog-to-digital converters (ADCs). The LT1993 features fixed-gain options of 2 (6 dB), 4 (12 dB) and 10 (20 dB) and a built-in user-adjustable filter. The low harmonic distortion of -70 dBc, combined with the 12.3 dB noise figure at 70 MHz, ensures system accuracy and high signal integrity.

The LT1993-2 features a fixed gain of 6 dB with 800 MHz, -3 dB bandwidth. The LT1993-4 has a 12 dB fixed gain with bandwidth reaching 900 MHz. The LT1993-10 offers a gain of 20 dB with 700 MHz bandwidth. All gain options are available for operation over the commercial and industrial temperature ranges. Offered in the 3 mm × 3 mm QFN package, pricing starts at $2.95 each in 1000-piece quantities.
Linear Technology Corporation
(408) 432-1900


Amplifier IC

Sirenza Microdevices has released the S510067, a CMOS 3.3 V RF integrated circuit (RFIC) for intermediate frequency (IF) digital TV applications.

The S510067 combines multiple functions into one RFIC. It is designed for use in VSB/NTSC receivers, PC TV tuners, VSB/QAM/NTSC tuner network interface modules (NIM), and integrated HDTVs and set-top boxes. The S510067 includes two input automated gain control (AGC) amplifiers and IF video amplifiers. In addition, the S510067 operates from 20 MHz to 100 MHz, has a gain range of 14 dB to 68 dB, and has more than 54 dB of total gain control range.

The S510067 is offered in either industry-standard QFN-28 or 20-pin TSSOP packages and is “green,” or RoHS-compliant. RFIC test evaluation boards with complete typical applications circuits are available on request.
Sirenza Microdevices
(303) 327-3030


GaAs pHEMT MMIC buffer amp

Mimix Broadband Inc. has introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), three-stage buffer amplifier. Using 0.15-micron gate-length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 18 GHz to 38 GHz frequency bands and can operate at 3.5 V or 5.5 V.

This device can also be operated with all three stages biased in parallel or with independent bias for input and output stages, as required to optimize performance. This MMIC device has a small signal gain of 21 dB with a noise figure of 3.2 dB across the band. It also has 11 dBm OP1dB at low noise bias or can provide 15 dBm OP1dB at power bias.

Engineering samples are available from stock, and production quantities are available six to eight weeks ARO.
Mimix Broadband
(281) 988-4600


Operational amplifiers

National Semiconductor Corp. has launched two amplifier products. The LMH6703 has a shutdown feature, provides 0.1 dB gain flatness out to 150 MHz, and features a low second/third-harmonic distortion of -87/-100 dBc at 5 MHz for driving single-ended high-speed ADCs. Likewise, the LMH6704 is a 650 MHz programmable gain buffer with internal gain-setting resistors, allowing the user to set the gain at -1, +1 or +2. It provides a shutdown feature, 0.1 dB gain flatness out to 200 MHz, and low second/third harmonic distortion of -62/-78 dBc at 10 MHz.

Both the op-amps, LMH6703 and LMH6704, are available in SOIC-8 and SOT23-6 packages. They are each priced at $1.49 in 1000-unit quantities.
National Semiconductor
(800) 272-9959


CDMA modules

Agilent Technologies has announced two 3 mm × 3 mm CDMA power amplifier modules featuring the company's CoolPAM technology. The Agilent WS1102 and WS1401 are CDMA power amplifier (PA) modules designed for handsets operating in the 824 MHz to 849 MHz and 1850 MHz to 1910 MHz bands, respectively. The WS1102 also operates in AMPS mode for backward compatibility with North American analog cellular systems.

These CoolPAM CDMA amplifiers are designed to operate at 3.4 V (3.2 V minimum). They incorporate 50▸ input and output matching networks and are equipped with a control pin that sets operating parameters for highest efficiency when operating at low-output power levels. The PAs provide a power-added efficiency of 20% at 16 dBm. They are supplied in a 3 mm × 3 mm by 1.4 mm, 8-pin surface-mount module designed to ensure high thermal conductivity, which minimizes temperature rise for higher reliability.

Sample and production quantities of the Agilent WS1102 and WS1401 CoolPAM power amplifier modules are available.
Agilent Technologies
(800) 452-4844


MMIC amplifier

Usable to 4 GHz, these high 25 dB gain amplifiers from Mini-Circuits feature both a high IP3 of +38 dBm and a low 2.5 dB NF. Even after passing grueling operating life tests of 5000 hours at elevated ambient temperature of 125 ∞C, these new rugged units still offer protection against unwanted transient supply voltages. They are offered at a low price of $2.35 each (quantity 25) and $1.85 each (quantity 1000).
Mini-Circuits Inc.
(718) 934-4500


802.11b/g SiGe power amplifier

Atmel Corporation has announced the availability of its WLAN power amplifier (PA) for the WLAN market. The 2.4 GHz PA ATR7032 meets the 802.11b/g standard and is manufactured using Atmel's silicon germanium (SiGe) technology. SiGe enables operation at a supply voltage range of 2.7 V to 3.6 V.

The ATR7032 offers the following performance characteristics: 32 dB gain, a linear power output of 23 dBm at 11 Mbps CCK, and an error vector magnitude (EVM) of 1.4% at an output power of 19 dBm under 54 Mbps OFDM conditions.

The integrated PA includes an on-chip temperature-compensated power detector with a dynamic range of 20 dB, and standby/bias control logic that provides shutdown and power-saving options. Furthermore, the PA includes fully on-chip input and interstage matching.

Samples of the WLAN PA ATR7032 in a QFN package measuring 3 mm × 3 mm are available. Atmel also provides a fully assembled evaluation board.
Atmel Corporation
(408) 441-0311


InGaP HBT WiMAX power amps

Anadigics has received production orders for the AWM6430 InGaP HBT 3.5 GHz class AB power amplifiers for fixed-point WiMAX applications. Anadigics is developing a portfolio of WiMAX power amplifiers that support next-generation 2.5 GHz and 3.5 GHz 802.16e mobile applications.

The integrated 4.5 mm × 4.5 mm AWM6430 WiMAX PA module provides an integrated step attenuator and output power detector. It offers fully matched RF ports and can operate from either a single 5 V or 6 V power supply. Anadigics' WiMAX PA is compatible with IEEE 802.16-2004 and ETSI EN301-021 standards and complies with the European Union's RoHS directive.
(908) 668-5000