WJ Communications Inc. has announced the AH212, growing its portfolio of InGaP HBT intermediate power amplifiers. The AH212 is a 1 W, high dynamic range, two-stage driver amplifier optimized for current and next-generation wireless technologies such as GPRS, GSM, CDMA and W-CDMA, where high linearity and high power are required.
The amplifier is housed in an SMT lead-free/green/RoHS-compliant SOIC-8 package. The InGaP/GaAs HBT is able to achieve performance for various narrowband-tuned application circuits, featuring 25 dB gain, +46 dBm OIP3 and +30 dBm of compressed 1 dB power. This device operates over the 1800 MHz to 2200 MHz frequency band and provides in-band gain flatness.
The high linearity performance provides ACPR/ACLR (adjacent-channel power/level) performance for spread-spectrum applications such as CDMA and W-CDMA. It is capable of providing +23.5 dBm power output for an IS-95A signal at -45 dBc ACPR when operating at 1960 MHz. For W-CDMA, the power output is +21 dBm with -45 dBc ACLR when operating at 2140 MHz. The AH212 also has an output return loss of 11 dB at 1960 MHz and 9 dB at 2140 MHz.
The amplifier is manufactured using the company's InGaP HBT process designed for wireless infrastructure requirements. Capable of operating over the -40 °C to +85 °C temperature range, the amplifier achieves in excess of one million hours MTTF at +85 °C. It also has an ESD rating of Class 1B (HBM per JEDEC standard JESD22-A114) and a level 2 MSL rating at +260 °C per JEDEC standard J-STD-020.
Production units are available. Fully assembled evaluation boards at 1960 MHz or 2140 MHz and loose samples are available.
DBS IF amplifiers
California Eastern Labs (CEL) has introduced a family of silicon and SiGe IF amplifiers. For designs in need of high gain, the UPC3225TB delivers 33.5 dB at 2.2 GHz. If low current is a concern, the UPC3227TB has an Icc of 4.8 mA at 5 V. There are five devices in the line-up, three of which are based on NEC's newest 50 GHz UHS2 high-speed SiGe process.
The IF amplifiers are housed in NEC's miniature RoHS-compliant TB packages. They measure 1.25 mm × 2.0 mm × 0.9 mm. Contact CEL for pricing and availability.
California Eastern Labs
Amplifiers for WiMAX
AR Worldwide RF/Microwave Instrumentation has added two models to its family of amplifiers designed for testing WiMAX components. The 15S5G7 and 30S5G7 are 15 W and 30 W amplifiers, respectively, designed for the 5 GHz to 7 GHz frequency range.
These broadband amplifiers are suited for testing WiMAX components because the amplified signal they produce is virtually indistinguishable from the signal generator's output. Their performance theoretically enables them to be used as substitute transmitters. Since the linearity of the amplifier signal is as strong as the signal generator there is no interference with adjacent channels. In addition, the units' high peak-to-peak power ratio means they deliver more usable power.
Both amplifiers include digital controls for local and remote control. Also, the RF amplifier stages are protected from overtemperature by removing the dc voltage to them if an overtemperature condition occurs due to cooling blockage or fan failure.
The Gali 74+ from Mini-Circuits is a 50 Ω monolithic amplifier intended for operation from dc to 1 GHz and usable to 4 GHz. The InGaP HBT IF and RF amplifier has transient protection built in and is unconditionally stable. The device also has a low thermal resistance of 120 °C/W and a low noise figure of 2.7 dB typical.
The device also features an output power of 19.2 dBm typical at 100 MHz, and a maximum power rating of 700 mW. The device typically draws 80 mA at 4.8 V. Other features include a gain of 25.1 dB and an IP3 of +38 dBm, both at 100 MHz, and a typical noise figure of 2.7 dB.
The RoHS-compliant device is priced at $2.35 for quantities of 25, and at $1.85 for quantities of 1000. Contact Mini-Circuits for more information.
LNA for CATV and HDTV
Hittite Microwave's GaAs pHEMT MMIC low-noise amplifier is ideal for 75 Ω applications in CATV and digital TV applications. The HMC549MS8GE is a 40 MHz to 960 MHz dual output, low-noise GaAs pHEMT MMIC amplifier that delivers a low 3.5 dB noise figure, and a high +27 dBm output IP3. The outputs of this MMIC LNA are well balanced and can be used to drive a differential input tuner with high IP2 requirements or the LNA can be used as an active splitter driving two single-ended input devices. This high dynamic range LNA is housed in an RoHS-compliant MSOP8G SMT package, and operates from a single +5 V supply.
Samples and evaluation PC boards for all SMT-packaged products are available. Data sheets may be found on Hittite's web site.
WLAN power amplifier
Tyco Electronics' M/A-COM's MAAPSS0075 is an RoHS-compliant 2.4 GHz linear power amplifier for 802.11b/g WLAN applications. The amplifier is suited for installations that require high gain, high efficiency, and small size at a cost-effective price.
The MAAPSS0075 is a three-stage power amplifier designed for linear 802.11b/g applications, which is available in a lead-free 3 mm 12-lead PQFN plastic package. The power amplifier features an integrated power detector for accurate power control and a separate power mode pin for current savings in a power shutdown mode state. The power amplifier achieves 19 dBm linear output power with an EVM of less than 3.5%, which maximizes system performance while maintaining low dc power consumption.
For 802.11g applications, the amplifier generates 19 dBm of linear output power (OFDM, QAM-64, 54 Mbps) while drawing 160 mA of current and maintaining an EVM of less than 3.5%. For 802.11b applications, the PA generates up to 23 dBm of linear output power using only 250 mA of current. The amplifier has a typical linear gain of 32 dB with an operating voltage of 3.3 V.
The MAAPSS0075 is available and priced at $0.40 in quantities of 100,000. Datasheets and supporting technical documents are available on the web site.
Analog Devices portfolio of radio frequency (RF) integrated circuits (ICs) has been extended with an analog-control variable-gain amplifier (VGA) that offers exceptional linearity over a broad frequency range for wireless infrastructure applications. The AD8368 is optimized to maintain dynamic range of base station radio transceivers, ensuring that weak and strong incoming call signals are effectively handled and maintained. In addition, the amplifier simplifies and reduces the number of external components required by integrating an accurate root-mean-square (rms) power detector on chip, which enables a complete automatic gain control (AGC) loop within a small 4 mm × 4 mm IC package.
The amplifier is capable of sustaining high linearity (OIP3 of 34 dBm at 70 MHz) at the highest intermediate frequencies (IFs), allowing it to be used in all wireless standards, including 2G and 3G, as well as emerging broadband wireless standards such as 802.16 (WiMAX). The 380 MHz frequency range allows the device to be used in receive and transmit paths within any wireless infrastructure standard where the use of one or more AGC loops optimizes the base station dynamic range or allows the designer to add additional gain for optimal signal dynamic range and sensitivity.
The linear-in-dB gain control conformance and flatness of the AD8368 can be attributed to ADI's X-AMP architecture. The AD8368 provides continuous 34 dB linear-in-dB gain control from -12 dB to + 22 dB. With a 3 dB bandwidth of 800 MHz independent of gain setting, a single-ended input and output drive, and exceptional linearity over the full operating range, the AD8368 is suited for use in GSM, CDMA2000, W-CDMA and TD-SCDMA cellular base stations. Operating from a single supply voltage of 4.5 V to 5.5 V, the AD8368 consumes 54 mA of current.
The AD8368 is sampling with full production scheduled for April. The device is priced at $4.55 per unit in 1000-piece quantities.
Audio power amplifier
STMicroelectronics' compact Class D power amplifier chip is intended for the new generation of mobile phones and other products seeking to provide higher audio power output while preserving and extending battery life. The TS4962 will provide 3 W of output power into a 4 Ω loudspeaker when operating on a 5 V power supply, and achieves 88% efficiency.
The amplifier is designed to operate over a 2.4 V to 5.5 V supply voltage range. Its quiescent current with no input signal is 2.3 mA typical, and standby current when powered down using its active-low control line is 10 nA. Pop and click reduction circuitry provides low on/off switching noise while allowing the amplifier to start within 5 ms. The gain is set using two external resistors.
A fully differential design reduces RF rectification effects and eliminates the need for a bypass capacitor. Output power is 3 W into 4 Ω or 1.75 W into 8 Ω, at 10% maximum total harmonic distortion plus noise (THD+N), on a 5 V supply. At 1% maximum THD+N, output power is 2.3 W into 4 Ω on a 5 V supply, or 0.75 W on a 3 V supply. Signal to noise ratio is typically 85 dB.
This amplifier is available in a lead-free, 1.6 mm square, nine-bump flip-chip package, and is supported by a development board, which includes the device pre-mounted onto a flip-chip to DIP adapter for easier handling during evaluation. Available in production volume, the device is priced at $0.55 in quantities of 5000 pieces.
(781) 861 2650
GaAs MMIC LNAs
Mimix Broadband's gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) product line has been extended to include the XL1003, XL1004 and the XL1005. The devices use 0.15 µm gate-length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology. These LNAs are suited for millimeter-wave point-to-point radio, LMDS and satcom applications.
The devices cover the 5 GHz to 45 GHz frequency bands. They are all balanced, single-supply amplifiers and collectively achieve the following performance: gain of up to 18.0 dB, gain flatness as low as +/- 2.0 dB and a noise figure as low as 1.7 dB.
Mimix performs 100% on-wafer RF, dc and noise figure testing on these amplifiers, as well as 100% visual inspection to MIL-STD-883 method 2010. These chips also have surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Engineering samples are available, along with small production quantities. Datasheets and product information for the low noise amplifier can be obtained from the web site.
Laser driver and post amplifier chipset
Micrel's 4.25 Gbps chipset includes the SY88992L, a VCSEL laser driver and the SY88403L, a post amplifier, to support fast-growing 4x fiber channel applications. The SY88992L offers up to 25 mA modulation current and operates from 155 Mbps to 4.25 Gbps, making it ideal for a variety of applications for the datacom market, including 4x fiber channel.
The amplifier offers programmable peaking with variable duration option for better VCSEL response, as well as balanced peaking, on the rising and falling edges. It is controllable with the company's MIC3001, a SFP management IC with internal calibration.
The SY88403L is a 4.25 Gbps post amplifier featuring high gain for loss of signal indicator. The product, along with the SY88992L and MIC3001, completes the 4.25 Gbps chipset, targeting 4x fiber channel applications. The IC is also the latest solution to be rolled out as part of Micrel's next-generation family of post amplifiers. The solutions were first launched in early 2005 and are designed for fast Ethernet to 4x fiber channel data rates.
The SY88992L is available in a small form factor, 16-pin, and 3 mm × 3 mm MLF packaging. The SY88403L is available in a small form factor, 16-pin, and 3 mm × 3 mm MLF and the company's MSOP packaging with backward-compatibility to Micrel's existing family of post amplifiers. These ICs are available in production volume with pricing starting at $1.95 for 10000-unit quantities.