Fairchild Semiconductor’s PowerEdge dual-band WCDMA / UMTS RF power amplifier module (PAM) increases power-added efficiency (PAE) to 42%, a significant improvement over competitive offerings. As the first 3G PAM to offer both 1850-MHz to 1910-MHz and 1920-MHz to 1980-MHz operation in a 3-mm × 3-mm LCC package, Fairchild’s RMPA2265 is approximately 44% smaller than alternative 4-mm × 4-mm packages, according to the supplier. The RMPA2265 addresses the high efficiency, frequency flexibility and size requirements of today’s 3G mobile handsets, PDAs and wireless PC data cards. The RMPA2265 also is compliant with the emerging high-speed downlink packet access (HSDPA) standard.

The RMPA2265’s excellent linearity and high PAE are achieved through the company’s proprietary InGaP heterojunction bipolar transistor (HBT) technology. The device has selectable high-/low-power modes used to further optimize current consumption. The 2-stage power amplifier internally matches both the input and output to 50 Ω to minimize the use of external components, thus simplifying design requirements.

The lead- (Pb) free RMPA2265 meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020B and is compliant with European Union requirements now in effect. In 10,000 pieces, the unit price is $0.98. Availability is now with delivery of 6 weeks to 8 weeks ARO.