Satellite-communications receiver designers can shave noise to a minimum with the model NE3515S02 heterojunction field-effect transistor (HFET) from Nippon Electric Co. (NEC) and available in the US from California Eastern Laboratories. The low-noise device features typical noise figure of a mere 0.3 dB at 12 GHz with associated gain of 12.5 dB. The device can also generate +14 dBm typical output power at 1-dB compression when biased with drain current of 25 mA and drain-source voltage of +3 VDC while still maintaining a noise figure of 0.5 dB

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The HFET is ideal for applications at X- and Ku-band frequencies, such as in direct-broadcast-satellite (DBS) low-noise block downconverters (LNBs) and in low-noise satcom receiver front ends. The transistor is housed in NEC’s RoHS-compliant S02 package. This hollow plastic surface-mount package has an overall footprint of just 3.2 x 3.2 mm and features recessed leads for lower inductance and improved performance. The transistor is priced at $0.99 in 10,000 qty.

California Eastern Laboratories (www.cel.com)