Using its proven silicon germanium carbon (SiGeC) BiCMOS process technology, labeled QUBiC4X, NXP Semiconductors has readied silicon germanium (SiGe) based discrete bipolar transistor for low-noise amplifiers (LNA) used in wireless applications such as GPS systems, DECT phones, satellite radio, WLAN / CDMA. First member in NXP’s LNA family, the wideband microwave NPN transistor BFU725F features an impressive blend of high switching frequency, high-gain and very low noise.

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The ultra-low noise figure improves the reception of the sensitive RF receivers found in various wireless devices, while the high cut-off frequency is suited to meet the needs of applications that operate in the 10 GHz to 30 GHz range, like satellite low noise blocks. Taking into account the package parasitics, the f_T is rated at 70 GHz. Also, the noise figure for the device is rated very low, 0.43 dB at 1.8 GHz and 0.7 dB at 5.8 GHz. Likewise, the transistor gain is 27 dB at 1.8 GHz and 10 dB at 18 GHz.

“We selected NXP’s SiGeC BiCMOS technology, because the end result is a combination of power gain and excellent dynamic range for a cost-effective silicon discrete,” said Bruce Bruchan, director of engineering satellite products, CalAmp Corp. “NXP’s continued development of products produced with SiGeC BiCMOS, demonstrates their commitment to their customers by continually innovating in response to increasing market needs in the fast moving microwave and wireless markets.”

“QUBiC4X was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range,” said Prof. Bart Smolders, Innovation Manager, NXP Semiconductors. “The idea is to have a silicon-based process with the performance of gallium-arsenide (GaAs) technologies, so we can provide cost-effective integrated high frequency solutions.”