Eyeing new RF power opportunities in broadcast, scientific, medical, radar and pulsed applications, Freescale Semiconductor has expanded its portfolio of 50 V LDMOS RF power transistors with three devices that set new standards for efficiency, gain, and thermal resistance when compared to competing bipolar and MOSFET devices. The devices are based on the manufacturer's sixth-generation, high-voltage (VHV6) 50 V LDMOS technology. They are designed for operation at frequencies from 10 MHz to 450 MHz.

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To achieve higher performance in gain and efficiency, improvements in the VHV6 LDMOS process are combined with innovations in device packaging and thermal management. Plus, the new devices incorporate electrostatic-discharge (ESD) protection, which makes them much less susceptible to electrostatic events on assembly sites. This ESD protection enables a wide gate voltage swing capability of -6 V and +10 V, which is advantageous when the devices are operating in higher classes of operation such as class C.

While two of the devices are designed for pulsed operation, the third can be used for CW and pulsed operation. Key specifications for the three devices are:

• MRF6VP21KH: 10 MHz to 235 MHz frequency range, 1 kW peak output power (at 225 MHz, 100 µs pulse width, 20% duty cycle), 24 dB gain, 67.5% drain efficiency, and low thermal resistance under pulsed conditions. It is designed for push-pull operation and targets applications like digital VHF TV transmitters and HF and VHF communications systems.

• MRF6VP41KH: 10 to 450 MHz frequency range, 1 kW peak output power (at 450 MHz, 100 µs pulse width, 20% duty cycle), 20.5 dB gain, 64% drain efficiency, and low thermal resistance under pulsed conditions. Typical applications include radar and public safety communications systems.

• MRF6VP2600H: 10 MHz to 250 MHz frequency range, 600 W CW P1dB output power (at 225 MHz), 125 W output power in typical OFDM direct video broadcast-terrestrial (DVBT) TV service, 25.8 dB gain, 29% drain efficiency, ACPR at 4 MHz offset of -61 dBc. Typical applications include FM broadcast transmitters, analog and digital VHF TV transmitters and ISM applications.

All three n-channel enhancement mode devices are unmatched and housed in air-cavity ceramic packaging and are RoHS compliant. Available in a bolt-down option, the MRF6VP41KHS is also one of the first RF power transistors at this power level to be available in a push-pull solder-down mounting-optimized package (the NI-1230S). The push-pull solder-down mounting option presents a smaller footprint than traditional air-cavity packages and combines low manufacturing cost and high reliability. The package is RoHS compliant and is compatible for use with lead-based solder.

The devices are slated for production. According to Freescale, large-signal models are expected to be available for all three devices early next year.

For more information, visit www.freescale.com.