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GaN-on-Si RF power transistor

Nitronex's 28 V, 100 W class GaN on Si electron mobility (HEMT) RF power transistor is specifically designed for applications operating between 2.1 GHz and 2.7 GHz. Designed using the SIGANTIC NRF1 process, the production-qualified NPT25100 transistor is ideal for continuous-wave (CW), pulsed, WiMAX, W-CDMA and long-term evolution (LTE) applications. The NPT25100 product qualification document is available on the company web site. Typical performance using a mobile WiMAX waveform is defined as a single-carrier OFDM 64 QAM ¾, 8 burst, 3.5 MHz channel bandwidth, 10.3 dB PAR at 0.01% probability on CCDF. Under these conditions, the NPT25100 transistor will deliver 16.5 dB power gain with a drain efficiency of 26% and an error vector magnitude (EVM) of 2.0% — all at 10 W of power. Typical two-tone peak envelope power (PEP) is 125 W, and drain efficiency is more than 65%.

The NPT25100 transistors are packaged in a thermally enhanced copper-moly-copper package available in a bolt-down version, with a pill version scheduled to be available in the fourth quarter. Samples and application boards are available. Pricing is $90 each in quantities of 1000.
Nitronex
(919) 807-9100
www.nitronex.com

GaAs HJ-FET LNA

NEC's GaAs HJ-FET LNA is ideal for use as a first-stage amplifier in satellite radio antenna applications. At 2 GHz, the NE3510M04 delivers a noise figure of just 0.35 dB (typ), with 19 dB of associated gain. Housed in a miniature four-pin package, it is ideal for compact, low-profile designs. Featured specifications include an operating frequency range from the L band to the S band, a typical noise figure of 0.35 dB at 2 GHz (V_DS = 2 V, I_D = 10 mA) and 0.45 dB at 4 GHz (V_DS = 2 V, ID = 15 mA). The typical associated gain is 19 dB at 2 GHz (V_DS = 2 V, I_D = 10 mA), and 16 dB at 4 GHz (VDS = 2 V, ID = 15 mA). Available now, the NE3510M04 package measures 1.25 mm × 2.0 mm × 0.59 mm.
California Eastern Labs
(408) 919-2500
www.cel.com

Miniature bipolar transistors

Zetex Semiconductors' miniature bipolar NPN and PNP transistors are provided in the SOT23FF package. The transistors provide lower saturation voltage, higher current gain hold-up, improved circuit efficiency and cooler operation. Peak current performance of 15 A offers a highly cost-effective alternative to dedicated gate driver ICs. Operating from 20 V through 100 V, the transistors drive MOSFET gates faster and more efficiently than CMOS IC alternatives. The ZXTN19020CFF and ZXTP19020CFF 20 V transistors have guaranteed gains of 100 at 7 A and 110 at 5 A, respectively. When connected in a common emitter configuration, they provide extremely fast switching. Propagation times are less than 2 ns, and rise and fall times are 10 ns to 20 ns. Thermal resistance figures are as low as 83 °C/W, with a 1.5 W continuous rating.

Immune to latch up, the transistors offer an improvement in overall system reliability. The SOT23FF package puts the devices as close as possible to the MOSFET, minimizing track inductance and ringing effects. The 60 V-rated ZXTN19060CFF NPN has a saturation voltage of just 150 mV at 1 A with a base drive of 10 mA, or 135 mV at 2 A with a base drive of 40 mA. The footprint is 2.5 mm × 3 mm, with a profile of 1 mm. Model ZXTN19020CFF is unit priced at $0.23 for 5000 units.
Zetex Semiconductor
(+44) 161 622 4700
www.zetex.com

Zero-crossover op-amp

Texas Instruments' OPA369 is a low-power zero-crossover op-amp featuring a unique single-input-stage architecture that simplifies high-performance designs in battery-powered applications. The single-input stage architecture delivers an offset voltage of 750 µV over the entire rail-to-rail input range, and provides a minimum CMRR of 100 dB.

Other features include a noise of 120 nV/Hz, gain bandwidth of 12 kHz on 1 µA, a maximum input bias current of 50 pA, a maximum low-voltage offset drift of 1.75 µV/°C, PSRR of 94 dB and 1/f noise of 3.6 µV_PK-PK (0.1 Hz to 10 Hz). Quiescent current is 1 µA, and operation down to 1.8 V is supported. Pricing for the OPA2369 starts at $1.20 in 1000-piece quantities.
Texas Instruments
(972) 644-5580
www.ti.com

Thermally stable Darlingtons

Allegro MicroSystems' STD series of Darlington transistors is designed exclusively for audio amplifiers. With a high safe operating area (SOA) and low thermal resistance derived from a thinner-die technology, the series achieves high-power performance in a TO-3P package. This series targets home and professional audio amplifier applications.

Allegro's STD01N/P and STD02N/P transistors provide a built-in thermal compensation diode on the same die, which eliminates any delay for thermal compensation operation and any delay between thermal sensing at the heat source and response at the compensation area. In addition, these devices achieve higher power levels through decreased thermal resistance, and can withstand higher voltages than similar devices. Overall, these transistors are ideal for applications where enhanced thermal stability is required. The STD01N/P and STD02N/P are priced at $1.50 and $1.70, respectively, in quantities of 1000.
Allegro MicroSystems
(508) 853-5000
www.allegromicro.com

Ruggedized VHF power MOSFET

Microsemi's rugged ARF521 is a VHF power MOSFET for MRI, CO₂ lasers, and RF plasma generators, as well as broadband linear amplifier applications. The device uses a fabrication process with finer geometry, and operates reliably at up to 165 Vdc. This enables it to deliver much higher peak power and RF gain than in previous high-voltage parts. The ARF521 is a single die, in a rugged SOE package and is capable of 150 W output power at up to 81 MHz.

The high-voltage wafer fabrication process for making these RF power MOSFETs doubles the transistor's available safe operating area, dramatically improves its resistance to load mismatch, provides superior thermal stability, and significantly enhances the ability to operate reliably in class AB. The high voltage of the output simplifies output-impedance-matching circuitry and facilitates combining a dc power supply and RF power amplifier into an integrated assembly that can significantly reduce size and overall system cost. SPICE models and a data sheet describing the features and benefits of the ARF521 VHF power RF MOSFET may be downloaded from Microsemi's web site. Samples are available. At quantities of 500 pieces, the unit price for the ARF521 is $44.05.
Microsemi
(800) 713-4113
www.microsemi.com

RF-detecting controllers

Maxim Integrated Products' MAX9930-MAX9933 are low-cost, low-power logarithmic amplifiers that control RF power amplifiers and transimpedance amplifiers (TIAs), and detect RF power levels. These devices provide a choice of three different input-voltage ranges, thus eliminating the need for external attenuators and, therefore, simplifying amplifier control-loop design. The MAX9930-MAX9933 are designed to operate in the 2 MHz to 1.6 GHz frequency range, and have a typical dynamic range of 45 dB with an accuracy of ±1 dB, making them useful in a variety of wireless and GPON fiber video applications such as transmitter power measurement and RSSI for terminal devices. Logarithmic amplifiers provide a much wider, more accurate measurement range than controllers based on diode detectors. Each of these amplifiers measures voltage in a distinct, typical signal range: -58 dBV to -13 dBV (MAX9930/MAX9933), -48 dBV to -3 dBV (MAX9931), and -43 dBV to +2 dBV (MAX9932).

The MAX9930-MAX9933 consume 5.9 mA with a 5 V supply, and the typical shutdown current is 13 µA. Furthermore, these devices feature a glitch-free output by asserting a power-on delay when coming out of shutdown. The MAX9930-MAX9933 are available in an 8-pin microMAX package. Prices start at $1.29 for 1000 pieces.
Maxim Integrated
Products
(408) 737-7600
www.maxim-ic.com

Power transistors for TCAS

Microsemi transistor for TCAS avionics transmitters features high power ratings. Designated the TCS1200, this class C biased, bipolar transistor provides 1200 W of output power at 1030 MHz, with 32 µS, 2% pulsing. It runs on 52 V, making it easy to design with existing 50 V to 52 V TCAS power supplies. The die uses gold metallization and integral emitter ballast resistors for maximum reliability. Production quantities are available, and data sheets are available on the Microsemi web site. At quantities of 100 pieces, the unit price is $444.44.
Microsemi
(800) 713-4113
www.microsemi.com

Non-reflective WiMAX CPE switch

NEC's 10 W DP4T GaAs MMIC switch targets designers incorporating WiMAX into their customer premises equipment (CPE) systems. Capable of switching up to four antennas between Tx and Rx, the UPG218TFR was developed specifically for maximizing CPE flexibility and data rates. Available from California Eastern Labs, it features high power-handling capability, high isolation, low insertion loss, and broadband operation to 3.8 GHz. It also features an onboard CMOS decoder that permits switching between eight Tx and Rx states using only three control inputs.

The UPG2181T5R also provides internal 50 Ω non-reflective port termination. This means that when the switch is busy in the receive mode, the idle transmit ports are automatically connected to a 50 Ω load instead of being left as open circuits, which helps to improve stability. The control voltage for the device is +3.0 V/0 V. Typical insertion loss is 0.8 dB at 2.3 GHz to 2.7 GHz, and 1.0 dB at 3.3 GHz to 8.0 GHz. The Tx P1dB is +40 dBm at +3.0 V control voltage; the Rx P1dB is +35 dBm at +3.0 V control voltage. Typical switching speed is 250 ns. The UPG2181T5R is housed in NEC's T5R package. Package size is 2.5 mm õ 3.5 mm × 0.6 mm. The device is available from California Eastern Laboratories (CEL). To help speed circuit design, CEL also offers evaluation boards.
California Eastern Labs
(408) 919-2500
www.cel.com

SPDT 3 V switch

M/A-COM's MASW-008075 is an SPDT 3.0 V switch fabricated for applications that require high linearity, low insertion loss and high isolation. This low-cost switch is suited for 802.11b/g applications with a bias of 3.0 V. The MASW-008075 switch has a low typical insertion loss of 0.40 dB while achieving an isolation of 25 dB and P1dB of 28 dBm.

Typical applications for the M/A-COM MASW-008075 include transmitter and receiver (Tx/Rx) switching in linear systems such as WLAN 802.11b/g, which connect the receiver and transmitter to a single antenna. In addition, diversity switching can be achieved by connecting two switches back-to-back on a printed circuit board. The switch is fabricated on a 0.5 m gate-length GaAs process and features full passivation for increased reliability. The device is housed in a SC-70 package; all devices are 100% RF tested. Available now, the switch is $0.12 for quantities of 100,000.
MA/COM
(978) 442-5000
www.macom.com