Agilent Technologies has unveiled its HiSIM2.4 model extraction package for DC and RF parameters for CMOS device models. The software package is designed for use with the firm's Integrated Circuit Characterization and Analysis Program (IC-CAP) software platform. It provides a simple and customizable means for measuring and extracting accurate DC and RF parameter values on CMOS devices for the HiSIM2.4 model. The device model, developed by Hiroshima University (Hiroshima, Japan, calculates a CMOS device’s surface potential, enabling accurate description of submicron physical phenomena and resulting in a more accurate description of the internal currents and charges.

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As Roberto Tinti, Product Manager for Agilent's EEsof Electronic Design Automation (EDA) division, explains: "Creating accurate device-simulation models for advanced CMOS digital processes is problematic because gate accumulation and tunneling, trap-assisted tunneling, and halo effects are observed at smaller technology nodes. Circuit designers can use Agilent’s HiSIM2.4 Model Extraction Package to accurately predict the behavior of highly non-linear RF circuits, such as mixers, amplifiers and switches." In addition, the HiSIM2.4 Model Extraction Package provides a high-speed link to Agilent’s Advanced Design System (ADS) software.

www.agilent.com