Microsemi Corporation has unveiled a state-of-the-art high duty cycle 500 W power transistor for UHF long pulsed radar applications. Designated the 0405-500L, this bipolar transistor is designed for UHF frequencies between 400 MHz and 450 MHz. According to Microsemi, this high-performance, common emitter, class C, high power transistor offers unparalleled performance of 500 W of peak power, 50% collector efficiency. It comes in a hermetically sealed package for the reliability of long pulsed radar and over-the-horizon radar applications.

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It offers high power and high gain over the specified frequency range with 1.1 ms pulse width and 26% duty cycle. Other features include high power gain of 9.5 dB and collector efficiency of 50%. The Vcc for the UHF transistor is +32 Vdc.