Mimix Broadband’s XP1018 is a a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), four-stage power amplifier with the unique feature of output power adjust. Using 0.15 μm gate length, GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 35 GHz to 45 GHz frequency bands, and has a small signal gain of 23 dB with +25 dBm P1dB compression point.
Mimix performs 100% on-wafer RF, DC and output power testing on the XP1018, as well as 100% visual inspection to MIL-STD-883 method 2010. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
This power amplifier is suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications. Samples are available now, along with production quantities.