RFMD has introduced a family of gallium nitride (GaN) high electron mobility transistor (HEMT) high-power transistors and is sampling to top-tier cellular infrastructure and WiMAX base station customers. The sampling of these transistors represents the achievement of a baseline 0.5 ìm GaN high-power transistor process by RFMD.
These high-power devices show excellent peak drain efficiency up to 67% at UMTS and up to 60% at WiMAX frequency bands. RFMD has achieved high gain of 16 dB, high power density of up to 4 W/mm at 28 V and 1000 hr high temperature reliability results.
RFMD's GaN HEMT transistors targeted to the emerging WiMAX base station segment include the 2.5 GHz RF3916 (50 W), RF3917 (75 W) and RF3918 (100 W), and the 3.5 GHz RF3821 (8 W) and RF3919 (50 W).