Mimix Broadband, Inc. has readied a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), sub-harmonically pumped up-converter, which integrates an image reject sub-harmonic anti-parallel diode mixer followed by a balanced two stage output amplifier. It also includes an integrated LO buffer amplifier. The image reject mixer eliminates the need for an image bandpass filter after the output amplifier to remove signal power at the image frequency. Using 0.15-micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this upconverter covers the 21.2 to 23.6 GHz frequency bands. The MMIC device has +20 dBm output third-order intercept (OIP3), 15 dB image rejection across the band, and 2 dBm LO drive level.

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This up-converter, identified as 22TX0392, is aimed at wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), and SATCOM.

The use of anti-parallel diodes and incorporation of an LO buffer cuts the number of MMICs needed to construct a 23 GHz commercial radio. Since the output power level is high enough, a single power amplifer is needed to deliver the required power to the radio output, said the manufacturer.

Mimix performs 100 percent on-wafer RF and DC testing on the 22TX0392, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available from stock, and production quantities are available six to eight weeks ARO, according to Mimix.