Hittite Microwave has released a pHEMT MMIC wideband driver amplifier and a pHEMT MMIC wideband power amplifier for applications from DC to 35 GHz. The HMC559 is a GaAs pHEMT MMIC 1 W power amplifier that operates from DC to 20 GHz and features 14 dB gain, +30 dBm saturated output power and +29 dBm of output power at 1 dB gain compression. The HMC559 wideband distributed amplifier also delivers excellent gain flatness of +/-0.7 dB from 2 GHz to 18 GHz.

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The HMC562 is a GaAs PHEMT MMIC distributed amplifier die that is rated from 2 GHz to 35 GHz. The ultra wideband amplifier provides 12 dB of gain and +16 dBm of output power at 1 dB gain compression while consuming only 96 mA from an 8-V supply.

Both the HMC559 and the HMC562 amplifier die are suitable for test equipment, military EW/ECM/radar applications, and both provide RF I/Os that are 50 W matched for ease of integration into multichip-modules (MCMs).

Samples are available from stock and can be ordered online. Released data sheets are also available on Hittite’s website.