California Eastern Laboratories (CEL) has announced the availability of two new GaAs HJ-FETs from NEC. Designed for use as low-noise amplifiers (LNAs) and driver amplifiers in satellite radio antennas, GPS antennas, and other L-Band applications, the NE3508M04 and NE3509M04 deliver low noise and high associated gain. Suitable for use as a first-stage amplifier, the NE3509M04 features a 0.35-dB noise figure (NF) with 16.3 dB of gain at 2.4 GHz, 2V, 10 mA. With a 0.41 dB NF and 14.0 dB gain, the NE3508M04 makes a good second- or third-stage companion device.

Article Tools

• 

Both are housed in NEC’s miniature, Pb-Free M04 4-pin flat-lead package. Ideal for compact, low profile designs, the M04 measures 1.25 mm x 2.0 mm and is just 0.59 mm in height. The NE3508M04 and NE3509M04 are in stock and available now in bulk or on tape and reel.