Mimix Broadband, Inc.’s gallium arsenide (GaAs)-based monolithic microwave integrated circuit (MMIC) distributed amplifier can be used as an ultra-wideband amplifier or as a fiber optic modulator driver. Using 0.15-micron gate-length GaAs pseudomorphic high electron mobility transistor (pHEMT) device technology, this distributed amplifier covers the 18 to 50 GHz frequency range. The device has a small signal gain of 17 dB with noise figure of 5 dB across the band. It also includes 30 dB gain control and +15 dBm output referred P1dB compression point. Labeled XD1001, it is suited for microwave, millimeter-wave, wideband military and fiber optic applications.

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According to the manufacturer, this device exhibits flat gain from 20 to 40 GHz and is useful from 18 to 50 GHz, with 14 to 15 dB gain at 3 V drain bias, and 17 to 19 dB gain at 5 V drain bias, with S11 better than –10 dB, S22 better than -12dB, and maximum OIP3 in the 23 to 26 dBm range, depending on frequency. In addition to the control of gain through drain bias voltage, the gain can be varied by adjusting the gate voltage from 0 to -0.8 V, with input-referred third-order intercept point (IIP3) ranging from +10 to 0 dBm as gain varies from 15 to 17 dB (at Vg = -0.2V for best IP3) down to -5 dB at Vg = -0.8 V. The device is suited to LO and RF buffering applications in broadband microwave radios, where a single part can be used for many applications. The part is also used as a sub-circuit in many of Mimix’s highly integrated receivers and upconverters.

Mimix performs 100% on-wafer RF, DC and output power testing on the XD1001, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available, along with small production quantities.