Mimix Broadband's gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two-stage doubler is designed to drive fundamental mixer devices. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this doubler converts input signals in the 8 to 12 GHz frequency range to output signals in the 16 to 24 GHz frequency range, and has +16 dBm output power level.

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Labeled 20DBL0451, it is suitable to drive Mimix's highly integrated receivers, as well as for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS) and SATCOM applications.

"This compact device provides 6 dB gain with good suppression of the fundamental input signal," stated Jim Harvey, CTO of Mimix Broadband. Mimix performs 100 percent on-wafer RF, DC and output power testing on the 20DBL0451, as well as 100 percent visual inspection to MIL-STD-883 method 2010.

The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. Engineering samples are available today from stock, along with production quantities.