Mimix Broadband, Inc. has released a new line of Ka-band gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) products, including power amplifiers and a doubler, covering the 27 to 34 GHz frequency bands, with the 30SPA0536 device achieving 36 dBm Psat. Using 0.15-micron gate-length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the new power amplifiers and doubler achieve high performance levels as shown in the table.

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The doubler 30DBL0537 used in conjunction with the amplifier 30SPA0536 provides a solution to highly integrated uplinks for commercial and defense applications, eliminating the need for a more complex heterodyne upconverter system design. The new amplifiers and doubler are suited for wireless communications applications such as millimeter-wave point-to-point radio, LMDS, satcom and VSAT applications.

Mimix performs 100% on-wafer RF, DC and output power testing on these products, as well as 100% visual inspection to MIL-STD-883 method 2010. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, with production quantities being made available six to eight weeks ARO.