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Freescale Semiconductor has expanded its portfolio of 50 V LDMOS RF power transistors with three devices (the MRF6VP21KH, MRF6VP41KH and MRF6VP2600H) that provide increased efficiency, gain, and thermal resistance when compared to existing bipolar and MOSFET devices. Delivering peak RF output power of 1 kW, the MRF6VP21KH and MRF6VP41KH devices are intended for broadcast, public safety and pulsed applications; the MRF6VP2600H device delivers peak RF output power of 600 W CW, and is intended for industrial, scientific and broadcast applications. These devices are based on Freescale's sixth-generation, high-voltage (VHV6) 50 V LDMOS technology.

The MRF6VP21KH features a 10 MHz to 235 MHz frequency range, 1 kW peak output power (at 225 MHz, 100 µs pulse width, 20% duty cycle), 24 dB gain, 67.5% efficiency, and low thermal resistance under pulsed conditions. The MRF6VP41KH features a 10 MHz to 450 MHz frequency range, 1 kW peak output power (at 450 MHz, 100 µs pulse width, 20% duty cycle), 20.5 dB gain, 64% efficiency, and low thermal resistance under pulsed conditions. The MRF6VP2600H features a 10 MHz to 250 MHz frequency range, 600 W CW P1dB output power (at 225 MHz), 125 W output power in typical OFDM DVBT TV service, 25.8 dB gain, 29% efficiency, and an ACPR at 4 MHz offset of -61 dBc.

All three devices are sampling now, and full production is expected in the fourth quarter. Reference text fixtures are available for all three devices. Large-signal models are expected to be available for the devices in early 2008.