Mimix Broadband, Inc. has released a gallium arsenide (GaAs) two-stage low-noise gain block amplifier that has a self-biased, single supply design. Using 0.25-um optical etch-stop pseudomorphic high electron mobility transistor (pHEMT) device model technology, this low-noise gain block, identified as CMM1100, covers the 2 to 18 GHz frequency bands and provides 3.5 dB noise figure and 18 dB gain, delivering 16 dBm P1dB.

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This low-noise gain block amplifier offers a unique combination of low-noise figure and broadband output match by employing a unique feedback stage to provide good noise figure that does not exist in typical distributed low-noise designs. Integrated bias coils and on-chip dc blocking are all inclusive in the compact chip measuring only 1.550 mm x 1.600 mm x 0.100 mm.

Engineering samples are available from stock, said Mimix.