Single chip simplifies digital broadcast cable set-top box design 

Geneva - STMicroelectronics has announced its first single-chip solution that allows TV viewers to watch digital cable TV channels on their analog TV ...

Programmable prescaler aids high-frequency PLLs and timing devices 

Santa Rosa, Calif. — Centellax Inc. has released a unique new divider unit for use in high-frequency PLLs...

Signal generator family offers differential I/Q output for improved testing 

Stevenage, England — Aeroflex Incorporated has added differential I/Q output to its 3410 series signal generator family for improved testing of RF integrated circuits (RFICs)...

Compact Bluetooth module is tailored for CDMA mobile devices 

Myrtle Beach, S.C. — AVX Corporation recently introduced a small class-size Bluetooth RF module for CDMA mobile phones. ...

Microfabricated next-generation millimeter-wave power amplifiers 

With the need for more band width and security, military communications systems are moving higher up on the spectrum scale. These systems are driving...

Bluetooth Americas 2003San Jose, Calif.December 9-11 

Billed as the only official Bluetooth SIG event in the United States, Bluetooth Americas 2003 also incorporates the Bluetooth Developers Conference....

Ericsson awarded Bluetooth license agreement by Winbond 

Stockholm -- Ericsson Technology Licensing announced a licensing agreement with Winbond Electronics Corp., a Taiwanese semiconductor manufacturer....

Maury Microwave and Modelithics form alliance 

Ontario, Calif. -- Maury Microwave Corp. announced that it signed an agreement with Modelithics Inc. to advance the application of load/source pull measurement for more efficient non-linear device modeling and circuit design....

FCC makes additional spectrum available for unlicensed use 

Washington, D.C. -- The Federal Communications Commission (FCC) made available Thursday an additional 255-megahertz of spectrum in the 5.470-5.725 GHz...

A monolithic X-band Class-E power amplifier for space based radar systems 

Low cost, highly efficient, high power, microwave and RF amplifiers are required for many commercial and defense system applications. These include WLANs,...

Affordable phase shifters for electronically scanned phased array antennas 

Phase shifters are critical elements for electronically scanned phased array antennas, and typically represent a significant amount of the cost of producing...

Multitone IMD offers clearer picture of MCPA performance 

Characterizing distortion is essential when evaluating multicarrier power amplifier (MCPA) performance. Traditional two-tone tests for intermodulation distortion (IMD) or single-carrier adjacent channel power ratio (ACPR) measurements are not sufficient to evaluate MCPAs. These amplifiers must instead be evaluated using multiple carriers as the stimulus, which more realistically simulate conditions the amplifiers will encounter in service. As an alternative to multiple carriers, multiple tones w...

Mobile Multimedia Antenna 

Antenova Ltd.'s unique antenna technology improves signal quality such that data transfer rates are multiplied, allowing handsets to support broadband...

Microwave PA Thermal Design for SATCOM Systems 

For many years, solid state power amplifiers and traveling wave tube amplifiers have been in competition in communication services. This is particularly so in satellite communication systems. Currently, the highest RF output power achievable from microwave transistors is 60 W at 6 GHz and 20 W at 14 GHz. Not only is the DC to RF efficiency a concern, but the RF combining efficiency is also critical to the success of a solid state power amplifier....

EDGE Modulation — How Linearization Improves Amplifier Performance 

Historically, the global system for mobile Communications was intended to make power amplifier design simpler. With the introduction of high order modulation schemes for 2.5 and 3G, the design challenges presented to the PA have increased significantly. This article describes the design and implementation of a polar loop to improve the efficiency of a gallium-arsenide field effect transistor (GaAs FET) power operating at 1.91 GHz....

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